BD139 Transistor BJT NPN TO-126

The BD139 Transistor BJT NPN TO-126 is a superior, dependable, and high-performing transistor, engineered for an extensive array of applications. This multifaceted component is indispensable for a variety of electronic and electrical circuits.

Key Features

• High current gain and low saturation voltage
• Outstanding hFE linearity
• High power dissipation capability
• Complementary PNP/NPN types
• Designed for audio amplifiers and drivers utilizing complementary or quasi-complementary circuits

Technical Specifications

• Collector-Emitter Voltage (Vceo): 80V
• Collector-Base Voltage (Vcbo): 80V
• Emitter-Base Voltage (Vebo): 5V
• Collector Current (Ic): 1.5A
• Power Dissipation (Pd): 12.5W
• Operating and Storage Junction Temperature Range: -55 to +150°C
• Package Type: TO-126

Possible Applications

• Audio amplifiers
• Driver stages in hi-fi amplifiers and television circuits
• Signal processing
• Power management
• Switching applications