MGW12N120 IGBT – High Voltage Insulated Gate Bipolar Transistor for Power Switching

The MGW12N120 is a robust Insulated Gate Bipolar Transistor (IGBT) designed for high voltage and high current power switching applications. It combines the fast switching capability of a MOSFET with the high current and low saturation voltage of a bipolar transistor.

⚙️ Key Features

• 🔋 Collector-emitter voltage (VCES): 1200V
• ⚡ Collector current (IC): 12A
• 📦 TO-247 package for excellent thermal management
• ⏱️ Fast switching speed suitable for inverter and motor control
• 🌡️ High efficiency with low conduction losses

📦 Typical Applications

• ⚙️ Industrial motor drives
• 🔌 Power inverters and converters
• 💡 Renewable energy systems
• 🛠️ High power switching circuits

The MGW12N120 IGBT is ideal for demanding power electronics requiring high voltage and current handling with efficient switching performance.